Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime
- Journal
- ACS Nano
- Status
- accepted
논문제목: Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime
저자: E. Yang=, S. Hong=, J. Ma=, S.-J. Park, D. K. Lee, T. Das, T.-J. Ha*, J. Y. Kwak*, J. Chang*
저널명: ACS Nano