<Abstract> We demonstrated a new method for the low-temperature solid-phase crystallization (SPC) of germanium on beryllium oxide (BeO) films for monolithic 3D (M3D) integration. Using a wurtzite crystal BeO film, known for its high thermal conductivity of 370 W/m-k at 300 K and covalent bonding characteristics, as the underlying layer, we crystallized Ge at a reduced temperature of 410 °C. For the Ge-on-BeO, the formation of larger grains was consistently promoted at annealing temperatures of 410–500 °C, with a notable 125 % increase in the grain size at 500 °C compared to that at the SiO2 underlayer. The polycrystalline Ge layers crystallized on the BeO retained their tensile strain, as confirmed by the Raman spectra. Furthermore, its optical bandgap of ∼ 1.36 eV and average roughness of 0.847 nm at an annealing temperature of 450 °C make it more suitable for an M3D upper channel layer than Ge-on-SiO2. A comprehensive experimental analysis confirmed the enhanced crystallinity, stability, and channel properties of poly-Ge layers crystallized on BeO. Hence, this study developed a new method for the low-temperature SPC process and highlighted the potential of BeO as a crystallization-assistance thermal-management material for next-generation 3D integrated technology.