Recently, the demand for ultrahigh-resolution (UHR) devices has led to a substantial increase in pixels per inch (PPI) in commercial products. However, as the pixel density increases, the unit pixel size decreases to a few micrometers, necessitating a significant reduction in the turn-on time of thin-film transistors (TFTs) for each gate line and the driving current level of the transistors. Additionally, the active channel dimension must be reduced due to the miniaturization of unit pixels, resulting in a smaller TFT footprint. [1] As a result, ensuring stability under bias stress becomes a critical challenge in the device scaling process. Oxide semiconductors have garnered significant attention in the display industry due to their advantageous properties, including excellent uniformity, high carrier mobility, and lower fabrication temperature. However, oxide semiconductor TFTs are greatly influenced by hydrogen in terms of stability, so there have been many studies conducted to address this problem. Among them, amorphous In-Sn-Zn-O (a-ITZO) TFTs have gained significant attention recently because it can exhibit better performance in terms of electrical characteristics compared to conventional oxide semiconductors. In this study, we measured the hydrogen content in annealed a-ITZO and confirmed the extent to which hydrogen affects its stability.

We demonstrated that it exhibits significantly improved PBTS characteristics of ITZO TFT at pre-annealed under 450 ᵒC air condition.